Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812387 | Thin Solid Films | 2005 | 4 Pages |
Abstract
The aim of this paper is to present results concerning the role of the buffer layer on pin devices, deposited in a single chamber for plasma enhanced chemical vapor deposition, using high hydrogen dilution and pressures at 27.12 MHz. By doing so, we allow the incorporation of nanoparticles into the i-layer, during plasma process. The results show solar cells with 8.8% efficiency with a collection efficiency of 95% in the blue region of the spectra. Apart from that, the results from impedance spectroscopy, imaginary impedance vs. real impedance, show difference of a semicircle radius as function of sample temperatures, which could be explained by total device series resistance variation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L. Raniero, S. Zhang, H. Águas, I. Ferreira, R. Igreja, E. Fortunato, R. Martins,