Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812395 | Thin Solid Films | 2005 | 4 Pages |
Abstract
In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5Ã108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Pimentel, E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, R. Martins,