Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812419 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Effects of lattice-matched substrates on growth of ZnO epitaxial films were studied. ZnO thin films were grown on single-crystalline InGaO3(ZnO)6 (IGZO) layers, which have small lattice mismatches of â¼0.8% and â¼2.2% in a- and c-axes, respectively. Epitaxial ZnO films were grown with the epitaxial relationship between the ZnO film and the single-crystalline IGZO of [0001]ZnO//[0001]IGZO//[111]YSZ and [112¯0]ZnO//[112¯0]IGZO//[11¯0]YSZ. The use of the lattice-matched substrate and optimization of film microstructure and post-annealing condition led to atomically flat surfaces at maximum process temperatures as low as 700 °C. A large Hall electron mobility â¼80 cm2 (V s)â1 (Ne: â¼2.8Ã1018 cmâ3) was obtained even if the film thickness was only 150 nm although comparable mobilities have been reported on films having much larger thicknesses (â¼1000 nm) fabricated at higher temperatures â¼1000 °C.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yujiro Takeda, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono,