MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates

SrIrO3 films were grown on (111)SrTiO3 substrates at 650 to 700 °C by metal organic chemical vapor deposition (MOCVD). Stoichiometric films were obtained above 650 °C for a wide range of input gas flow rate of Ir source under a fixed rate for a Sr source. (001)m-oriented monoclinic SrIrO3 films with in-plane 3-varian were epitaxially grown and their rocking curve full width at half maximum (FWHM) of (001)m peaks were forward to be narrow, i.e. 0.075°. Average surface roughness (Ra) of such film was 0.30 nm, which suggests that the surface is smooth. Resistivity at room temperature was about 1300 μΩ cm and (111)-oriented epitaxial Pb(Zr0.4Ti0.6)O3 films with smooth surfaces were successfully grown on these SrIrO3 films. Good ferroelectricity characteristics comparable to those on (111)cSrRuO3(111)SrTiO3 was obtained except for the large coercive field (Ec) values.