| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812454 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Exploiting the SrTiO3 large dielectric constant, Field Effect Transistors were realized using the substrate as dielectric insulator and depositing a metallic gate electrode on the back of the substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Bellingeri, D. Marré, I. Pallecchi, L. Pellegrino, G. Canu, A.S. Siri,