Effect of millimeter-wave annealing on (Ba,Sr)TiO3 films prepared by chemical solution deposition

(Ba,Sr)TiO3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition and annealed by 24 GHz millimeter-wave (mm-wave) radiation as well as electric furnace heating. It was found that BST amorphous films were crystallized by mm-wave annealing at a lower temperature than by electric furnace heating. Films annealed at 973 K for 60 min by the mm-wave had a larger grain size and fewer pores, showing a higher dielectric constant of 270 and a lower leakage current density below 2 × 10− 2 A/m2 up to ± 3 V. Films annealed for 1 min exhibited dielectric constant and leakage current similar to those annealed for 60 min, and atomic diffusion between the film and the electrode was barely observed.