Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812519 | Thin Solid Films | 2005 | 7 Pages |
Abstract
Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 °C, ITO films with a lowest resistivity of 2.2Ã10â4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ming-Huei Yang, Jyh-Chung Wen, Kai-Lin Chen, Shau-Yi Chen, Ming-Sheng Leu,