Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812541 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Transparent conducting indium zinc oxide (In2O3-ZnO) thin films were fabricated by a sol-gel method. Zinc acetate dihydrate [Zn(CH3COO)2·2H2O] and indium nitrate trihydrate [In(NO3)3·3H2O] were used as starting precursors, and 2-methoxyethanol as a solvent. Monoethanolamine was added as a stabilizer. The starting solution was spin-coated onto a glass substrate. Thin films at several atomic ratios of Zn/(Zn + In) were annealed at 650 °C. The minimum resistivity (Ï â 1.5 Ã 10â 3 Ω cm) and maximum carrier concentration (n â 3.0 Ã 1020 cmâ 3) were obtained for the film whose atomic ratio was 0.5. The optical transmittance in the visible region was 80â85% irrespective of atomic ratios. After the Zn2In2O5 (a homologous compound ZnkIn2Ok+3 where k = 2 and corresponds to the atomic ratio of 0.5) films were post-annealed in a reducing atmosphere, the carrier concentration increased to approximately 4.0 Ã 1020 cmâ 3 and the optical window was narrower, although the resistivity slightly increased.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Seung-Yup Lee, Byung-Ok Park,