Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812553 | Thin Solid Films | 2005 | 4 Pages |
Abstract
We report on the comparative studies of epitaxial SiC films grown on silicon-on-insulator (SOI) and Si bulk substrates. The silicon-over-layer (SOL) on the SOI has been thinned down to different thicknesses, with the thinnest about 10 nm. It has been found that the full-width-at-half-maxim in the X-ray diffraction spectrum from the SiC films decreases as the SOL thickness decreases, indicating improved quality of the SiC film. A similar trend has also been found in the Raman spectrum. One of the potential explanations for the observation is strain accommodation by the ultra-thin SOI substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F.Y. Huang, X.F. Wang, G.S. Sun, W.S. Zhao, Y.P. Zeng, E.L. Bian,