Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812554 | Thin Solid Films | 2005 | 7 Pages |
Abstract
Refractory binary metal nitride films, (Ti, Zr)Nx, were prepared by direct current reactive magnetron sputtering from a Ti-5 at.% Zr alloy target in N2Â /Â Ar gas mixtures and then used as diffusion barriers between Cu and Si substrates. In order to investigate the thermal stability of Cu (60 nm)Â /Â (Ti, Zr)Nx (6 nm)Â /Â Si contact systems, sheet resistance measurement, X-ray diffraction, scanning electron microscopy, cross-section transmission electron microscopy, and X-ray photoelectron spectroscopy depth profile were performed. Experimental results indicate that the barrier performance are significantly affected by the chemical composition of (Ti, Zr)Nx films, NÂ /Â (Ti, Zr) atomic ratio. Besides, our results also suggest that the refractory binary metal nitride film, (Ti, Zr)Nx, can be used as a superior diffusion barrier for Cu metallization as compared to the well-known TaN film.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yu-Lin Kuo, Chiapyng Lee, Jing-Cheng Lin, Yee-Wen Yen, Wen-Horng Lee,