Preparation of AlCuFe quasicrystalline film by pulsed laser-arc deposition

Formation of stable AlCuFe quasicrystalline thin films by pulsed laser-arc deposition technique is reported in this paper. Using a single-source bulk AlCuFe quasicrystal as target material, AlCuFe film with ideal composition of quasicrystalline phase formation was deposited by suitably controlling the deposition parameters. The as-deposited film was basically in amorphous form. Icosahedral phase appeared after the films were annealed at elevated temperature. AlCuFe film was also deposited by pulsed laser ablation. Comparison of the quality of the films prepared using the two methods indicates that pulsed laser-arc deposition has greater ability in forming AlCuFe quasicrystalline structure.