Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812591 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Aluminum nitride (AlN) films were grown on sapphire substrates by radio frequency magnetron sputtering in plasma containing a mixture of argon and nitrogen, using a pure aluminum target. Surface morphology dependence of the AlN films on growth conditions such as substrate temperature and nitrogen concentration was investigated. c-axis preferred wurtzite AlN film with surface roughness as small as 2.9 nm was obtained at substrate temperature of 100 °C and nitrogen concentration of 20%. The surface roughness of the AlN films increased with increasing substrate temperature and nitrogen concentration. The correlation between the growth conditions and the film morphology was discussed.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Q.X. Guo, M. Yoshitugu, T. Tanaka, M. Nishio, H. Ogawa,