Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812598 | Thin Solid Films | 2005 | 6 Pages |
Abstract
Nickel monosilicide (NiSi) nanowires (NWs) were grown at a relatively low temperature of 575 °C by the Metal Induced Growth (MIG) method without using a gas type silicon source. In the MIG technique, silicon dioxide is first plasma deposited onto a Si wafer followed by 20-160 nm of Ni. Si is then deposited by D.C. magnetron sputtering on the heated substrate. A nickel silicide is first formed which then leads to nanowire formation. Nanowires were a single crystal structure, 20-100 nm in diameter and 1-10 μm in length. Composition and structure were verified by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The mechanism of NiSi nanowire formation is discussed herein.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Joondong Kim, Wayne A. Anderson,