Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812612 | Thin Solid Films | 2005 | 5 Pages |
Abstract
TiO2 thin films were prepared by the inductively coupled Ar+-plasma sputtering method. The effects of O2 partial pressure on photoelectrochemical performance of the mainly anatase-TiO2 electrodes were studied. O2 partial pressure systematically affected the carrier density and the current-voltage characteristics of the electrodes. An electrode deposited at lowest O2 partial pressure (11 mPa) showed almost 3 orders of magnitude greater donor density and 4 times larger photocurrent compared to the one deposited at highest O2 partial pressure (52 mPa). The differences in current-voltage characteristics of the electrode samples are discussed on the basis of the space charge layer formation in the electrodes with different carrier densities.
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Physical Sciences and Engineering
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Authors
Enkhtuvshin Dorjpalam, Masahide Takahashi, Yomei Tokuda, Toshinobu Yoko,