| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812618 | Thin Solid Films | 2005 | 6 Pages |
Abstract
We have analysed by Transmission Electron Microscopy and Photoluminescence (PL) the structural and optical properties of Ga1âxInxNyAs1ây quantum wells with Indium and Nitrogen contents in the range 0.20
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Herrera, D. González, R. GarcÃa, M. Hopkinson, P. Navaretti, M. Gutiérrez, H.Y. Liu,