Microstructural relaxation of hydrogenated amorphous carbon thin films

Capacitive spectroscopy measurements carried out on small and wide gaps as-deposited hydrogenated amorphous carbon thin films evidence a long-time evolution of the capacitive response of the films. The reported phenomenon analyzed within the classical Cohen-Lang model evidences a slow variation with time of the density of states at the Fermi level indicating a likely defect creation within the films. Based on this conclusion, we built up a model describing the influence of the viscous stress field on the electronic properties.