Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812689 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Compared to the composition of the precursors, significant loss of C for each layer and some loss of N for the DLCSiN layers were obtained, while the O/Si ratios for the DLCSiO layers remained practically unaltered. The modified Auger parameter of Si (Si α) decreased with increasing oxygen content and increased with increasing N content for the DLCSiO and DLCSiN layers. Si α was proposed to reflect the degree of crosslinking. For the DLCSiO and DLCSiN layers Si α could be altered by the deposition conditions (self-bias). The appearance of Si-O bonds was inferred from the valence band analysis of an Ar+ ion bombarded DLCSi layer containing O-contamination.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Tóth, M. Mohai, T. Ujvári, I. Bertóti,