Formation of ZnTe compounds by using the electrochemical ion exchange reaction in molten chloride

The formation of ZnTe films was investigated on zinc substrates at 640 K by using the following ion exchange and chemical reaction processes,2Zn(substrate)+Te4+(in molten salts)→2Zn2++Te(on substrate)Zn(substrate)+Te(on substrate)→ZnTe(on substrate)The Te4+ species was supplied to the substrate via the gas phase, vaporized from the eutectic LiCl-KCl molten salt containing TeCl4 (0.05-0.9 mol%). The phase of the films obtained depended on the reaction time and the TeCl4 content in the molten chloride. At low TeCl4 concentrations, ZnTe alloy was not formed over the entire surface even after 3.6 ks. On the other hand, at high TeCl4 concentrations, tellurium was detected in addition to the ZnTe compound during the first 0.3 ks of the reaction. By selecting appropriate TeCl4 concentrations and reaction times, a ZnTe film with a smooth, dense surface was obtained. The relationship between the particle size in the film and flaking of the film was also studied.