Schottky diode using FeCl3-doped polyaniline

In the present paper, Schottky diodes using metal (gold)-polyaniline (PANI) junction, where PANI is doped with various concentrations of FeCl3 viz. 1%, 3%, 5%, 10% (w/v) in distilled water, have been prepared. The J-V characteristics for different Schottky diodes have been reported. It is observed that as in conventional Schottky diodes, forward current is three orders of magnitude more than the reverse current. Electronic parameters like Richardson constant, ideality factor, barrier height, junction resistance, contact potential, and forward bias cutoff frequency have been calculated using J-V and C-V measurements.