Investigation of a-C:F films as hydrogenated diamond-like carbon and low-k materials

Fluorinated amorphous carbon films were deposited on a p-type silicon substrate by using an inductively coupled plasma chemical vapor deposition with mixture of carbon tetrafluoride and methane gases. The structural properties of fluorinated amorphous carbon films as a diamond-like carbon were studied by Raman spectra, Fourier transform infrared spectra (FTIR) and X-ray photoelectron spectroscopy (XPS) spectra as a function of the flow rate ratio of precursors. The variation of the fluorine contents of fluorinated amorphous carbon films was investigated by X-ray photoelectron spectroscopy. From these chemical results, the correlation between the dielectric constant and the variation of the bonding structure as a function of the flow rate ratio was researched.