Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812897 | Thin Solid Films | 2005 | 5 Pages |
Abstract
Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition.
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Authors
Y. Matsuda, Y. Koyama, M. Iwaya, M. Shinohara, H. Fujiyama,