Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812918 | Thin Solid Films | 2005 | 4 Pages |
Abstract
The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the Er luminescence intensity was decreased and the temperature quenching was also fast because of the small band gap resulting in the decrease of electron-hole pair energy. Accordingly, the critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Nae-Man Park, Tae-Youb Kim, Sang Hyeob Kim, Gun Yong Sung, Kwan Sik Cho, Jung H. Shin, Baek-Hyun Kim, Seong-Ju Park, Jung-Kun Lee, Michael Nastasi,