Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812925 | Thin Solid Films | 2005 | 5 Pages |
Abstract
We have investigated the effect of the oxygen pressure and the deposition temperature on the electrical and optical properties of the Sn-doped indium oxide (ITO) films on quartz glass substrate by pulsed laser deposition (PLD) using a 10 wt.% SnO2-doped In2O3 target. The resistivity and the carrier concentration of the films were decreased due to the decrease of the oxygen vacancy while increasing the oxygen pressure. With increasing deposition temperature, the resistivity of the films was decreased and the carrier concentration was increased due to the grain growth and the enhancement of the Sn diffusion. We have optimized the PLD process to deposit a highly conductive and transparent ITO film, which shows the optical transmittance of 88% and the resistivity of 2.49Ã10â4 Ω cm for the film thickness of 180 nm.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sang Hyeob Kim, Nae-Man Park, TaeYoub Kim, GunYong Sung,