The etching properties of MgO thin films in Cl2/Ar gas chemistry

In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using Cl2/Ar plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at Cl2(30%)/Ar(70%) gas mixing ratio. Moreover, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).