Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812951 | Thin Solid Films | 2005 | 6 Pages |
Abstract
The characteristics of organic light-emitting diode (OLED) can be improved by the doping of nickel (Ni) into indium tin oxide (ITO) anode. Ni-doped ITO films were synthesized using Ni and ITO cosputter approach. Film properties, such as surface roughness, optical transmittance, sheet resistivity, and surface work function, independent of Ni-doping level were examined. Results show that the Ni-doped ITO films perform lower surface roughness and higher surface work function without scarifying the optical transmittance after thermal annealing at 300 °C. OLED devices with an Al/tris(8-hydroxyquinoline)aluminum/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'biphenyl-4,4'-diamine/ITO/glass structure were fabricated to investigate the effect of the Ni-doped ITO anode. From the I-V characteristics of the OLED devices, the threshold voltage can be reduced from 12 to 8 V when the Ni atomic concentration is greater than 1.8%.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ching-Ming Hsu, Jin-Win Lee, Teen-Hang Meen, Wen-Tuan Wu,