Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9812961 | Thin Solid Films | 2005 | 7 Pages |
Abstract
By controlling the pretreatment processes and deposition parameters on silicon substrates, diamond thin films with different surface roughness and sp2/sp3 ratio were used as an interlayer for subsequent c-BN (cubic boron nitride) thin film deposition studies. The diamond interlayers were prepared by microwave plasma chemical vapor deposition (CVD), while the c-BN top layers were prepared by unbalanced magnetron sputtering physical vapor deposition. The substrate curvature changes before and after the c-BN deposition were measured to better understand the relationship between film stress and adhesion to the diamond. In the range of our experimental parameters, results showed that a rougher surface and higher ratio of sp2/sp3 in the diamond layer improves the adhesive strength of the c-BN layer. An optimized layer structure of Si/diamond/BN is established. Grading of the diamond layer is expected to be helpful for adhesion enhancement of c-BN thin films on diamond interlayers.
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Authors
Qi He, Chengming Li, Craig Frankel, Lawrence Pilione, Bill Drawl, Fanxiu Lu, Russell Messier,