| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812965 | Thin Solid Films | 2005 | 8 Pages |
Abstract
The rf bias voltage primarily influenced the crystal orientation and hardness of the deposits. Films deposited without bias presented about 80% of (200) orientation and 20% (111), whereas at rf biasing the orientation was preferentially (200). The hardness values on stainless steel substrates varied from 1200 to 1600 Hv0.01, and cross-section SEM images showed that the CrN films had a dense microstructure where columnar growth was inhibited. The relationship between growth conditions, microstructure and plasma parameters is presented and discussed.
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Authors
J.J. Olaya, S.E. Rodil, S. Muhl, E. Sánchez,