| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812973 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of femtosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region.
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Authors
Guangjun Zhang, Donghong Gu, Fuxi Gan, Xiongwei Jiang, Qingxi Chen,