| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9812988 | Thin Solid Films | 2005 | 8 Pages |
Abstract
The investigation of Pb(Zr,Ti)O3 (PZT) etching mechanism in both Cl2/Ar and CF4/Ar plasmas was carried out. It was found that, in CF4/Ar plasma, etch rate has a maximum at 80% Ar, while for Cl2/Ar plasma, etch rate keeps a constant value up to 40% Ar. The volume densities and fluxes of active species in both gas mixtures derived from the zero-dimensional (0-D) plasma models change in same manner while a nonmonotonic behavior was not observed. However, the analysis of surface kinetics confirmed the possibilities of nonmonotonic etch rate behavior in both gas mixtures due to a concurrence of physical and chemical pathways in ion-assisted chemical reaction.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.M. Efremov, Dong-Pyo Kim, Chang-Il Kim,