Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9813018 | Thin Solid Films | 2005 | 8 Pages |
Abstract
A full-wafer backside n-ohmic metallization scheme for InP is reported. The contact is formed by a single-step, all-sputter process and has been used successfully in three-inch InP opto-electronic device manufacturing. The metallization is based on the combination of a nickel-germanium-gold ohmic contact followed by a titanium-titanium nitride-titanium-gold metal stack. The titanium nitride layer acts as a barrier to grain boundary diffusion of indium and other material from the substrate to the surface of the top gold layer. The top gold is required for a gold-tin solder die bond process. The sputter process provides better than 5% cross-wafer and wafer-to-wafer thickness uniformity and a contact resistance of 2.5-8.3Ã10â5 Ω cm2. We report the fabrication process for this metal contact and the results of a full physical characterization by transmission electron microscopy, Auger survey and depth profile analysis and X-ray analysis.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
St.J. Dixon-Warren, S. Zhang, R. Kuchibhatla, E.M. Griswold, A. Shen, F. Zheng, S.R. Das,