Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9813083 | Thin Solid Films | 2005 | 7 Pages |
Abstract
The formation and structure of a thin film deposited using tetrakis-(dimethylamino)-titanium [Ti(N(CH3)2)4, TDMAT] as a precursor onto a Si(100)-2Ã1 substrate at ultrahigh vacuum (UHV) conditions was investigated by a combination of surface analytical techniques. The effects of surface temperature and pressure of the precursor molecules on the deposition rate are correlated with the monolayer chemistry of the precursor. The titanium carbonitride (TiCxNy) thin films produced by thermal deposition of TDMAT onto Si(100)-2Ã1 at 593 K are continuous and smooth with a root-mean-square (RMS) roughness of <2 nm, having a thickness with a lower limit of 4.7±0.4 nm, and a stoichiometry of approximately x=y=1. In addition, it was determined that the lower limit of the sputtering rate for TiCxNy was â¼0.016 nm sâ1 under the conditions used here. These films hold great promise as barrier materials in next-generation microelectronic devices.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Semyon Bocharov, Zhanping Zhang, Thomas P. Jr., Andrew V. Teplyakov,