| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9813084 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Thermally stimulated exoelectron emission has been applied for high-resolution depth profiling of traps in amorphous SiO2/Si3N4/SiO2 (ONO) dielectric stacks used in silicon-oxide-nitride-oxide-silicon (SONOS) memory devices. It is shown that maximum density of traps responsible for charge storage in ONO structures is at the interface between top silicon oxide and silicon nitride in ONO.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Naich, G. Rosenman, Ya. Roizin,