Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9813104 | Thin Solid Films | 2005 | 5 Pages |
Abstract
We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related devices. Simple magnetic tunnel junctions (MTJs) were fabricated in a cross geometry using ex situ thermally evaporated cobalt and permalloy. Our best junctions obey the Rowell criteria for tunneling and exhibit a tunnel magnetoresistance of 15% at 100 K.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Androulakis, S. Gardelis, J. Giapintzakis, E. Gagaoudakis, G. Kiriakidis,