| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9816838 | Ultramicroscopy | 2005 | 6 Pages |
Abstract
We implanted B atoms in Si(1Â 1Â 3) and annealed the samples to make B segregate to the surface. A series of Si(1Â 1Â 3)-3Ã1:B surfaces with different B-induced features have been observed by scanning tunneling microscopy. It is demonstrated that on a Si(1Â 1Â 3) surface B is favorable to be self-interstitials underneath a type of surface reconstructing blocks called pentamers and such pentamers can be boronized with different numbers of B atoms and therefore appear at different levels of electronic states.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Zhaohui Zhang, Koji Sumitomo, Feng Lin,