Article ID Journal Published Year Pages File Type
9816853 Ultramicroscopy 2005 4 Pages PDF
Abstract
In quantum dots (QDs) three-dimensional confinement of carriers leads to energy level discreteness to exhibit a rich spectrum of phenomena including quantum confinement, exchange splittings, Coulomb blockade, and multiexciton transitions. In this paper, five-period vertically stacked samples with size-controlled growth were grown by molecular-beam epitaxy (MBE) with solid sources, and the surface morphologies of self-assembled vertically stacked InAs quantum dots were characterized by atomic force microscopy (AFM). We described structural and optical properties of vertically aligned InAs QDs embedded in Al0.5Ga0.5As and employed a size-controlled growth procedure for the QDs. The strongly localized electron coupling effect and many-body effect lead to quantum dephase splitting of the ground state energy of the vertically aligned InAs QDs.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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