Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9816853 | Ultramicroscopy | 2005 | 4 Pages |
Abstract
In quantum dots (QDs) three-dimensional confinement of carriers leads to energy level discreteness to exhibit a rich spectrum of phenomena including quantum confinement, exchange splittings, Coulomb blockade, and multiexciton transitions. In this paper, five-period vertically stacked samples with size-controlled growth were grown by molecular-beam epitaxy (MBE) with solid sources, and the surface morphologies of self-assembled vertically stacked InAs quantum dots were characterized by atomic force microscopy (AFM). We described structural and optical properties of vertically aligned InAs QDs embedded in Al0.5Ga0.5As and employed a size-controlled growth procedure for the QDs. The strongly localized electron coupling effect and many-body effect lead to quantum dephase splitting of the ground state energy of the vertically aligned InAs QDs.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shuwei Li, Kazuto Koike,