Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9816855 | Ultramicroscopy | 2005 | 6 Pages |
Abstract
Local photocurrent detection has been performed by contact mode atomic force microscopy (AFM) with a conductive tip under laser illumination on InAs wires on GaAs. We adopted a piezoresistive cantilever deflection sensor to avoid the influence of an extra laser light which is conventionally used in a cantilever deflection sensor system for AFM. In this study, we measured the photocurrent from the InAs wires on a GaAs substrate and investigated its dependences on the wavelength of an incident laser light and on bias voltage.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hiroyuki Masuda, Misaichi Takeuchi, Takuji Takahashi,