| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817458 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
The quaternary semiconductor GaInAsSb is an interesting candidate for thermophotovoltaic applications. Precise control of the crystal composition is required. GaInAsSb layers with a thickness of 300 nm have been grown by metal organic vapor phase epitaxy on (1 0 0) GaSb wafers with 2° off-orientation towards (1 1 0) and (1 1 1)A. The composition was determined with a combination of Rutherford backscattering and grazing detection particle induced X-ray emission. An influence of the miscut direction as well as the TBAs flow on the In incorporation in GaInAsSb is observed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
V. Corregidor, N.P. Barradas, E. Alves, N. Franco, L.C. Alves, P.C. Chaves, M.A. Reis,