Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817536 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
Ion beam induced luminescence (IBIL) measurements have been performed on thin film scintillators based on polyvinyltoluene (PVT) and 6FDA-DAD and BPDA-3F polyimides with H+ (1.85Â MeV) and He+ (1.8-2.2Â MeV) ion beams. The radiation hardness of the undoped polymers has been verified to depend mainly on the deposited energy density, polyimides exhibiting a higher resistance with respect to PVT. In PVT a new fluorescence band, attributed to the radical precursors of the network crosslinking, has been observed. The efficiency of doped polymers degradates with a higher rate, depending on the dye intrinsic lability. At high radiation fluences, the relative efficiency to NE102 of doped polyimides scintillators increases owing to the intrinsic host improved resistance.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Alberto Quaranta,