Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817548 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
In this work, 4 MeV N+ was implanted into n-type InP layers at 77 K and room temperature (RT) to obtain high-resistivity regions. The influence of dose and initial carrier concentration of the doped layer on the isolation process is investigated. A maximum sheet resistance of 5 Ã 106, 1 Ã 106 and 7.9 Ã 105 Ω/sq is obtained for samples of initial carrier concentration 4 Ã 1017, 4 Ã 1018 and 1 Ã 1019 cmâ3 respectively. It is found that the threshold dose to convert the n-type InP layer into a highly resistive one is linearly dependent on its initial carrier concentration. The threshold dose, defined as the dose at which maximum sheet resistance is obtained, shifts towards higher values with increasing initial carrier concentration.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Too, S. Ahmed, R. Gwilliam, B.J. Sealy,