| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817580 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
L. Nowicki, A. Turos, A. Stonert, F. Garrido, L.W. Molenkamp, P. Bach, G. Schmidt, G. Karczewski, A. Mücklich,