Ion beam analysis of CdTe nuclear detector contact grown by electroless process

Ion beam analysis was performed on CdTe(II-VI) semiconductor materials in order to characterize metal contacts, namely Pt, deposited by electroless process. It is essential to perform such a material which can provide high detection quality that needs good deposited metal contact as thick as possible. Rutherford Backscattering Spectrometry was used to determine the thickness and the stoichiometry of the layers formed at the surface. The depth profiles of Pt, Cd, Te and O were determined as a function of the dilution solution and the pH parameters which seemed to be determinant factors in the Pt layer deposition process. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, which can greatly influence the electrical quality of detectors.