| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817595 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
In the framework of this study we have performed 400Â keV 13C ions implantation into polished copper substrates at different temperatures and implanted doses with a 2Â MV Tandem accelerator. Using the reactions described above, we have studied the evolution of 13C depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Julien L. Colaux, Guy Terwagne,