| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817631 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
Dependence of the synchrotron light-excited etching of ZnTe on the pressure has been investigated. Ar gas was used as an etching gas, and the ZnTe sample was negatively biased against the reaction chamber. The etching rate increases with increasing the pressure, and the maximum etching rate of 16.7Â nm/AÂ min has been achieved. In order to discuss the etching mechanism, the wavelength dependence of the etching properties was examined using a LiF window.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Tooru Tanaka, Yusuke Kume, Kazuki Hayashida, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa,