| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817645 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
In this article, we report a practical application of physical-phasing X-ray crystallography to access specific information about the electron-density distribution on an III-V semiconductor. The objective is to demonstrate that physical measurements of phase invariants can also be useful as an alternative method for studying crystalline structures. Here, evidences are given of their sensitivity to non-spherical charge distribution around atomic sites.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
S.L. Morelhão, L.H. Avanci, S. Kycia,