Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817665 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
The evolution of ion beam synthesized Co and Ge nanoclusters into a SiO2 matrix during annealing processes has been investigated by X-ray diffraction and transmission electron microscopy. Remarkable differences have been found between Ge and Co clusters behaviour. For Ge implanted SiO2 films, a clear influence of near-surface Ge oxidation and nanoclusters melting has been established. Annealing at temperatures around 1000 °C leads to the formation of small (diameter â¼5 nm) nanocrystals. Classical Ostwald ripening mainly drives the clusters thermodynamical growth. On the contrary, for Co-implanted SiO2 films, a jump-like transition in nanoclusters evolution has been established at about 800 °C. A homogenous distribution of small (diameter â¼4 nm) amorphous clusters is transformed into a bimodal clusters profile, characterised by large (diameter between 20 and 40 nm) nanocrystals near the surface and a region of smaller clusters (diameter â¼7 nm) in depth. During Co nanoclusters formation the influence of nanoclusters melting can be neglected.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
V. Cantelli, J. von Borany, A. Mücklich, N. Schell,