| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817672 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
CdSe quantum dots (QDs) were synthesized by ion-implanting constituent atoms in SiO2, thermally grown on Si-wafer. The influence of implantation and post-implantation treatment parameters was studied by grazing incidence small angle scattering of X-rays (GISAXS). The effect of stoichiometry deviations was analyzed for various Cd:Se ratios in the range of 0.75-1.95. The best correlated ensemble of QDs in implanted layer was found for 1.33 and 1.1 Cd:Se ratios, and 30 s post-implant annealing at 700 °C. These findings were related with the amount of well-crystallized CdSe QDs, as found by Raman scattering.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
I.D. Desnica-Frankovic, P. Dubcek, M. Buljan, K. Furic, U.V. Desnica, S. Bernstorff, H. Karl, I. GroÃhans, B. Stritzker,