Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817713 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 7 Pages |
Abstract
In this paper, we show the implementation of the BF3 PIII associated with the LTP. Ions from BF3+ plasma have been implanted in 200 mm n-type silicon wafers with energies from 100 eV to 1 keV and doses from 3E14 to 5E15 at/cm2 using PULSION® (IBS PIII prototype). Then, wafers have been annealed using SOPRA VEL 15 XeCl excimer lasers (l = 308 nm, 200 ns, 15 J/pulse) with energy density from 1 to 2.5 J/cm2 and 1, 3 or 10 shots. The samples have been characterized at CEA LETI by secondary ion mass spectrometry (SIMS) combined with four points probe sheet resistance measurements.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Frank Torregrosa, Cyrille Laviron, Frédéric Milesi, Miguel Hernandez, Hasna Faïk, Julien Venturini,