| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9817714 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 5 Pages |
Abstract
Analysis of the blank wafers indicated that B18HX+ showed the same or better characteristics than B+ in junction depth and sheet resistance. Post-processing electrical measurements of the pMOSFETs implanted with B18HX+ showed that they performed with nearly identical characteristics as ones implanted with B+.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Y. Kawasaki, T. Kuroi, T. Yamashita, K. Horita, T. Hayashi, M. Ishibashi, M. Togawa, Y. Ohno, M. Yoneda, Tom Horsky, Dale Jacobson, Wade Krull,