Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9817720 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2005 | 4 Pages |
Abstract
Plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) was combined with the selective absorption modulation using SiO2 layer to form ultra-shallow p+/n junction. By depositing a controlled thickness of SiO2 layer on top of the silicon substrate, we were able to confirm the reduction of laser energy density by 400 mJ/cm2 (29%) and the formation of ultra-shallow junction at 12.7 nm (@1018 cmâ3) with Rs of 670 Ω/sq., which demonstrated the high feasibility of this new method.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
C.G. Jin, Y. Sasaki, K. Okashita, H. Tamura, H. Ito, B. Mizuno, K. Tsutsui, S. Ohmi, H. Iwai,