Implantation and annealing of aluminum in 4H silicon carbide

Aluminum ions with a dose between 1.2 × 1014 cm−2 and 1.2 × 1015 cm−2 were implanted into 4H silicon carbide at room temperature, 650 °C, and 800 °C. High temperature furnace and lamp annealing of the implanted samples were investigated with respect to sheet resistance, hole mobility and free hole concentration. For an aluminum dose of 1.2 × 1015 cm−2 implanted at room temperature and subsequent furnace annealing at 1700 °C for 30 min, a sheet resistance of about 34 kΩ/□ and for lamp annealing at 1770 °C for 5 min, a slight increased sheet resistance of 38 kΩ/□ was obtained. Increasing implantation temperature to 800 °C and postimplantation furnace annealing resulted in a decreased sheet resistance of 18 kΩ/□.